QPD0005

    2.5 - 5.0 GHz, 8 Watt, 48 Volt GaN RF Transistor

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    Data sheet available upon request.
    Contact your local sales representative for assistance.

    Key Features

    • Operating Frequency Range: 2.5 - 5.0 GHz
    • Operating Drain Voltage: +48 V
    • Maximum Output Power (PSAT) at 3.6 GHz: 8.7 W
    • Maximum Drain Efficiency at 3.6 GHz: 72.9%
    • Efficiency-Tuned P3dB Gain at 3.6 GHz: 18.8 dB
    • 4.5 x 4.0 mm DFN Package
    Mouser 71 Buy Online >
    RELL 95 Buy Online >
    RFMW 80 Buy Online >

    The QPD0005 is a single-path discrete GaN on SiC HEMT in a plastic overmold DFN package which operates from 2.5 to 5.0 GHz. It is a single-stage, unmatched transistor capable of delivering PSAT of 8.7 W at +48 V operation.

    Lead free and RoHS compliant.

    Typical Applications

      • WCDMA / LTE
      • Macrocell Base Station
      • Microcell Base Station
      • Small Cell
      • Active Antenna
      • 5G Massive MIMO
      • General Purpose Applications
    Frequency Min(MHz) 2,500
    Frequency Max(MHz) 5,000
    Gain(dB) 18.8
    Psat(dBm) 39.4
    Drain Efficiency(%) 72.9
    Vd(V) 48
    Idq(mA) 12
    Package Type DFN
    Package(mm) 4.5 x 4.0
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99