QPD0007

    DC - 5 GHz, 20 Watt, 48 Volt, GaN RF Transistor

    Key Features

    • Operating Frequency Range: DC - 5.0 GHz
    • Operating Drain Voltage: +48 V
    • Maximum Output Power (P3dB) at 3.5 GHz: 20 W
    • Maximum Drain Efficiency at 3.5 GHz: 73%
    • Efficiency-Tuned Back Off Gain at 3.5 GHz: 19 dB
    • 4.5 x 4.0 mm DFN Package
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    The QPD0007 is a single-path discrete GaN on SiC HEMT in a DFN package which operates from DC to 5 GHz. It is a single-stage, unmatched transistor capable of delivering P3dB of 20W at +48 V operation.

    Lead free and RoHS compliant.

    Typical Applications

      • WCDMA / LTE
      • Macrocell Base Station
      • Microcell Base Station
      • Small Cell
      • Active Antenna
      • 5G Massive MIMO
      • General Purpose Applications
    Frequency Min(MHz) DC
    Frequency Max(MHz) 5,000
    Gain(dB) 19
    Psat(dBm) 43
    Drain Efficiency(%) 73
    Vd(V) 48
    Idq(mA) 32.5
    Package Type DFN
    Package(mm) 4.5 x 4.0
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN 5A991G